Transient Liquid Phase (TLP) Bonding
Low-temperature metal wafer bonding by Transient Liquid Phase (TLP)
Introduction
Transient Liquid Phase (TLP) bonding is often used when high-reliability bond lines or electric connections are needed. In this process, the interlayer melts, and the interlayer element diffuses into the substrate materials, thereby causing isothermal solidification. This results in a bond that has a higher melting point than the bonding temperature.
The unique characteristic feature of Transient liquid phase (TLP) bonding is that the liquid bond interface solidifies by diffusion but not by cooling below a melting point compared to eutectic bonding. This enables low process temperatures while providing much higher remelt temperature after joining the wafers. In particular, the interlayer is a low melting point material that moves into the lattice and grain boundaries of the high melting point parent materials, thereby forming an inter-metallic layer. In TLP, it is important to select a suitable interlayer based on the flow characteristics, stability and wettability in order to form a composition that provides faster diffusion characteristics and high reliability. Compared to other bonding technologies, TLP is an advanced type of solder bonding method that can form hermetic sealing at lower temperatures. It is ideal for MEMS vacuum packaging, as the process can be performed at low temperatures compatible with CMOS standards and the resulting bonded devices can withstand harsh environments with high temperatures.
Features
- Vacuum encapsulation
- Defined pressure encapsulation
- Conductive process
- Hermetic sealing
- Good mechanical strength
- Low temperature process
- Less applied force during bonding
- Very good post-bond alignment
- Applied in many metallic and ceramic systems
- Joints with uniform composition profile
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SEMICON EUROPA 2026
Treffen Sie das EVG-Team am Stand #B1241 und besuchen Sie unsere Poster-Präsentationen auf der APC:
"Software-Driven Strategies for Advanced Multi-Die Patterning in Digital Lithography" von Business Development Manager Dr. Ksenija Varga und “Leveraging Advanced Bonding Technologies to Enable Scalable Co-Packaged Optics Architectures” von Business Development Manager Elisabeth Brandl.
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Darüber hinaus wird unser Corporate Sales & Marketing Director Thomas Uhrmann Teil der Podiumsdiskussion „SEMICONDUCTOR TOUR 2026“ sein, welche von der YOLE Group am 12. November im Novotel München Messe veranstaltet wird. Für mehr Informationen klicken Sie hier.
Industrial Print Integration Conference (IPI) 2026
Hören Sie sich unsere Keynote an: “Advancing AR/VR and CPO: EV Group’s Inkjet Solutions for Next-Generation Optics” gehalten vonJohanna Rimböck (Technology Development).
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EPTC 2026
Besuchen Sie unseren Stand #2 & hören Sie sich unsere Vorträge an:
"Scalable Manufacturing Approaches for Co-Packaged Optics via NIL and Advanced Wafer Bonding" gehalten von Director Business Development Dr. Bernd Dielacher und
“Advancing 310×310 mm² Panel Level Packaging: High Throughput Pathways to High Yield 3D Integration” und “Plasma–Enabled Die Singulation on Film Frame Carrier for Advanced HBM and Logic Die Integration” von Business Development Manager Dr. Ksenija Varga.
“Hybrid Bonding Overlay Reduction Through Lithographic Pre-Compensation of the Residual Fingerprint” von Technical Program Manager Sander Grosemans.
EVG & Brewer Science: “Polymer Buffer Layer Enabling a Novel RDL–First Process Flow using a Silicon Carrier and IR Laser Debonding Technology” shared presentation, Peter Urban & Brewer Science.
EVG & CEA–Leti: “Nanometer Level Chip- Scale Transfer Enabled by IR Laser Debond Technology”.
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