Temporary Bonding and Debonding
Temporary bonding and debonding enabling backside processing for 3D integration
Introduction
Temporary bonding is an essential process to offer mechanical support for thin or to-be-thinned wafers, which are key for 3D IC, power device and FoWLP wafers, as well as for handling fragile substrates like compound semiconductors. EVG’s outstanding bonding know-how includes temporary bonding equipment, which has been provided by the company since 2001.
EVG’s open adhesive platform supports all commercially available materials, offering full process integration for temporary bonding and debonding. Adhesives are mainly classified by their debonding mechanism (weakening the adhesive bond between the device and carrier wafer), which is based on laser, mechanical force or temperature. Slide-off and lift-off debonding mark the starting point of temporary bonding at EVG with more than 20 years of experience. More recent developments of mechanical and UV-laser-initiated debonding are combined in EVG’s LowTemp debonding process, where the debond temperature is around room temperature. Especially for recent developments in advanced packaging, LowTemp debonding technologies are essential steps to enable back-side processing of silicon as well as the production of ultra-thin chips and packages for next-generation devices.
Features
- Open adhesive platform
- Modular tool layout – throughput optimized depending on specific process
- Bridge capability for different substrate sizes
- Available with multiple load port options and combinations
- Integrated metrology enables feedback loop for high-yield processes in automated tools
- Software monitoring of the whole process
- Fully integrated SECS/GEM interface in automated tool
Figures
Events
MNE 2023
Visit us at our booth & listen to our talk "Nanoimprint Lithography – Unleashing its Potential" held by Dr. Glinsner Thomas on 26th of September!
244th ECS Meeting
Listen to our talks:
"Inline bondwave monitoring for fusion bonding, process optimization and impact on post-bond distortion" on 10th of October 10:40 AM at Room R24 and R25, Level 2
"Surface activated Si-Si wafer bonding using different ion species" on 11th of October 09:00 AM at Room R24 and R25, Level 2
"Oxide-free SiC-SiC direct wafer bonding and its characterization" on 11th of October 11:00 AM at Room R24 and R25, Level 2
"Recent developments in low temperature wafer level metal bonding for heterogenous integration" on 12th of October 09:40 AM at Room R24 and R25, Level 2
ISMP 2023
Listen to our talk "State-Of-The-Art Wafer Bonding for HBM and Heterogenous D2W 3D Integration" held by Dr. Glinsner Thomas on October 26th, 09:50 in the Grand Ballroom A!