EVG®850 LT

Automated Production Bonding System for SOI and Direct Wafer Bonding

Automated production bonding system for a wide range of fusion/molecular wafer bonding applications

Wafer bonding is one key enabling technology for the SOI wafer fabrication process as well as for wafer-level 3D integration. With the EVG850 LT automated production bonding system for mechanically aligned SOI and direct wafer bonding with LowTemp™ plasma activation, all essential steps for fusion bonding – from cleaning, plasma activation and alignment to pre-bonding and IR-inspection – are combined. Thus, the field-proven, industry-standard EVG850 LT assures a high-throughput, high-yield production process for void-free SOI wafers up to 300 mm sizes.

Features

  • SOI and direct wafer bonding with EVG's LowTemp™ plasma activation
  • Suitable for a wide range of fusion/molecular wafer bonding applications
  • Production system built to operate in high-throughput, high-yield environments
  • Automated cassette-to-cassette operation (ergo load, SMIF or FOUP)
  • Contamination-free backside handling
  • Megasonic and/or brush cleaning
  • Pre-bonding with mechanical flat or notch alignment
  • Advanced remote diagnostics
EVG850 LT

Technical Data

Wafer diameter (substrate size)
100 - 200, 150 - 300 mm
Fully-automated cassette-to-cassette operation
Pre-bonding chamber
Alignment type: flat-to-flat or notch-to-notch
Alignment accuracy: X and Y: ± 50 µm, Theta: ± 0.1 °
Bond force: up to 5 N
Bond wave initiation position: flexible from wafer edge to center
Vacuum system: 9x10-2 mbar (standard) and 9x10-3 mbar (option with turbo pump)
LowTemp™ plasma activation module
2 standard process gases: N2 and O2 and 2 additional process gases: high purity gases (99.999%), noble gases (Ar, He, Ne, etc.) and forming gases (N2, Ar with up to 4 % H2)
Universal mass flow controller: self calibrating for up to 4 process gases, recipe programmable and up to 20.000 sccm flow rate
Vacuum system: 9x10-2 mbar (standard) and 9x10-3 mbar (option with turbo pump), high frequency RF generators and matching unit
Cleaning station
Cleaning Method: rinse (standard), megasonic nozzle, megasonic area transducer, jet nozzle, brush (optional)
Chamber: made of PP or PFA
Cleaning media: DI-water (standard), NH4OH and H2O2 with max. 2 % concentration (option)
Spinner chuck: vacuum chuck (standard) and edge handling chuck (option) made of metal ion free and clean materials
Rotation: up to 3000 rpm (in 5 s)
Cleaning arm: for up to 5 media lines (1 megasonic system uses 2 lines)
Optional features
Class 1 mini-environment (according to US FED STD 209E)
LowTemp™ plasma activation chamber
IR-inspection station

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