Automated production bonding system for a wide range of fusion/molecular wafer bonding applications
SOI wafers represent a promising foundational material for the microelectronics industry, enabling the production of faster and higher-performance devices. Wafer bonding serves as a critical enabling technology not only for SOI (silicon on insulator) wafer fabrication but also for other engineered substrates like piezo on insulator (POI). One special kind of POI is also TFLN (thin film lithiumniobate), which is used for quantum and photonics applications.
The EVG850 SOI automated production bonding system offers a comprehensive solution for fusion bonding. By leveraging LowTemp™ plasma activation for mechanically aligned SOI and direct wafer bonding, it unifies every essential stage of the fusion bonding process—from surface activation and cleaning to pre-bonding and IR-inspection within one equipment. As the sole production system engineered for high-throughput, high-yield environments, the field-proven EVG850SOI guarantees a robust process for creating void-free wafer bonds.
Features
- SOI and direct wafer bonding with EVG's LowTemp™ plasma activation
- Suitable for a wide range of fusion/molecular wafer bonding applications
- Production system built to operate in high-throughput, high-yield environments
- Automated cassette-to-cassette operation (ergo load, SMIF or FOUP)
- Contamination-free backside handling
- Pre-bonding with mechanical flat or notch alignment
- Advanced remote diagnostics
Technical Data
| Wafer diameter (substrate size) |
|---|
| 100 - 200, 150 - 300 mm |
| Fully-automated cassette-to-cassette operation |
| Pre-bonding chamber |
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| Alignment type: flat-to-flat or notch-to-notch |
| Alignment accuracy: X and Y: ± 50 µm, Theta: ± 0.1 ° |
| Bond force: up to 5 N |
| Bond wave initiation position: flexible from wafer edge to center |
| Vacuum system: 9x10-2 mbar (standard) and 9x10-3 mbar (option with turbo pump) |
| LowTemp™ plasma activation module |
|---|
| 2 standard process gases: N2 and O2 and 2 additional process gases: high purity gases (99.999%), noble gases (Ar, He, Ne, etc.) and forming gases (N2, Ar with up to 4 % H2) |
| Up to 3 process gases with mixing capability and recipe programmable |
| Vacuum system: 9x10-2 mbar (standard) and 9x10-3 mbar (option with turbo pump), high frequency RF generators and matching unit |
| Cleaning station |
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| Cleaning Method: rinse (standard), megasonic nozzle, megasonic area transducer, jet nozzle, brush (optional) |
| Chamber: made of PP |
| Cleaning media: DI-water (standard), diluted cleaning agents like NH4OH or citric acid |
| Spinner chuck: vacuum chuck (standard) made of metal ion free and clean materials |
| Rotation: up to 3000 rpm (in 5 s) |
| Cleaning arm: for up to 5 media lines (1 megasonic system uses 2 lines) |
| Optional features |
|---|
| ISO 3 mini-environment (according to ISO 14644) |
| LowTemp™ plasma activation chamber |
| IR-inspection station |
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