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Vertical Integration through Aligned Permanent Bonding Techniques
Abstract: Through-silicon-via (TSV) interconnects can provide the shortest length and the highest density with significantly reduced signal delay and power consumption. Due mainly to a thermal budget of CMOS devices, bonding processes compatible with CMOS processing are limited only to solder-based bonding, plasma-assisted oxide bonding, direct Cu-Cu bonding, polymer adhesive bonding, and metal-polymer hybrid bonding.
Effects of Bonding Process Parameters on the Interfacial Properties of Cu-Cu Direct Bonds for TSV Integration
Abstract: Cu-Cu direct bonding facilitates fine-pitch interconnection with low electrical resistivity and high EM resistance. However, reliable Cu-Cu bonding stems only from high temperature, high pressure and long process time mainly because of its tendency to generate a native oxide which deadly impacts device reliability.
Aligned fusion wafer bonding for wafer-level packaging and 3D integration
Abstract: Wafer-level packaging via wafer bonding allows smaller and thinner packages, improves the yield due to higher cleanliness, enables the encapsulation of vacuum or process gas and finally reduces the packaging costs significantly. High precision alignment of device wafer to cap wafer allows real chip size packaging as the required width of the sealing rings is in the low micron range...
Adhesive wafer bonding for MEMS applications
Abstract: Low temperature wafer bonding is a powerful technique for MEMS/MOEMS devices fabrication and packaging. Among the low temperature processes adhesive bonding focuses a high technological interest. Adhesive wafer bonding is a bonding approach using an intermediate layer for bonding (e.g. glass, polymers, resists, polyimides). The main advantages of this method are: surface planarization, encapsulation of structures on the wafer surface, particle compensation and decrease of annealing temperature after bonding....
Adhesive wafer bonding for wafer-level fabrication of microring resonators
Abstract: Adhesive wafer bonding for wafer-level fabrication of microring resonators Abstract: GaInAsP/InP passive microring resonator devices were successfully fabricated using a vertical integration concept with GaInAsP/InP-on-GaAs wafer bonding. BCB adhesive bonding has been identified as the preferred wafer bonding process. This paper reports results on the development of the wafer bonding and on the microring fabrication.
Adhesive Wafer Bonding With SU-8 Intermediate Layers For Micro-Fluidic Applications
Abstract: Recently adhesive wafer bonding using SU-8 has gained a lot of interest for micro-fluidic devices e.g. lab-on-chip applications. Due to its specific properties as well as the capability to pattern thin and thick layers accurately, SU-8 is an ideal candidate for micro-fluidic components like channels, reservoirs and valves, but also for micro-optical components...
Advanced anodic bonding processes for MEMS applications
Abstract: Anodic bonding is a powerful technique used in MEMS manufacturing. This process is applied mainly for building three-dimensional structures for microfluidic applications or for wafer level packaging. Process conditions will be evaluated in present paper. An experimental solution for bonding three wafers in one single process step (“triple-stack bonding”) will be introduced...
Microring resonators fabrication by BCB adhesive wafer bonding
Abstract: Microring resonator devices are attractive for Wavelength Division Multiplexing (WDM) applications because of their inherent spectral characteristics. GaInAsP/InP microring resonator devices were fabricated using a vertical integration concept based on GaInAsP/InP-on-GaAs wafer-to-wafer bonding...
New Challenges for 300 mm Si Technology - 3D Interconnects at Wafer Scale by Aligned Wafer Bonding
Abstract: A new alignment technique is proposed for wafer level 3D interconnects fabrication: the SmartView®. This original procedure is using alignment keys located in the bonding interface and enables an alignment precision of 1 µm...
Trends in aligned wafer bonding for MEMS and IC wafer-level packaging and 3D interconnect technologies
Abstract: The continuous reduction of IC feature size, the increased demand for higher speed, the lower power consumption and the simultaneous increase of I/O leads to wafer-level packaging through aligned wafer bonding as an interesting solution for IC and MEMS packaging. Portable consumer products such as wireless handsets and upcoming high-performance computing devices drive the semiconductor industry to develop advanced packaging solutions with reduced thickness and area dimensions...
III-V wafer bonding technology for wafer-level fabrication of GaInAsP/InP microring resonators
Abstract: GaInAsP/InP passive microring resonator devices were successfully fabricated using a vertical integration conecpt with GaInAsP/InP-on-GaAs wafer bonding. BCB adhesive bonding has been identified as the preferred wafer bonding process. This paper reports results on the development of the wafer bonding and on the microring fabrication.