SOI 晶圓

The name "silicon-on-insulator" for this innovative material was derived from its composition, where a thin silicon layer resides on top of an insulating, buried silicon dioxide layer. Wafer bonding is one of the most important manufacturing methods for SOI wafers, and it found its way into mass adoption given it is a cost efficient and production proven process.

The EVG850 production wafer bonding system is the key enabling system for successful SOI wafer production. Two wafers - a carrier and a donor wafer - are joined at room temperature under low mechanical force, low vacuum and extreme cleanliness. The subsequent annealing step forms an irreversible chemical bond. Of these two wafers, one has an oxide layer from silicon oxide (SIO2). This oxide layer creates the isolator in the SOI wafer. After the two silicon wafers have been bonded in the production wafer bonder, one wafer is thinned back. This creates an ultrathin, monocrystalline conducting silicon layer. The isolation layer below creates a thin channel that transports electrical impulses smoothly and therefore quicker and at lower power requirements. This isolation layer also avoids an undesired electron flow as it separates the transistors from the below located silicon material.

SOI wafers produced using Smart Cut® technology. Courtesy of SOITEC.


Principle drawing of an SOI wafer. Source EVG.


Phenom X4 Processor based on SOI Technology. Courtesy of AMD.