EVG®520IS Semi-automated Wafer Bonding System

Configurable for all wafer bonding processes such as anodic, thermo compression, fusion bonding, or LowTemp™ plasma bonding.

 

  • Heater size = Max. wafer diameter: 150mm or 200mm
  • Min. wafer diameter: 150mm heater: single chips; 200mm heater: 100mm
  • Bond chuck system / Alignment system:
    150 mm heater: EVG610, EVG620, EVG6200
    200mm heater: EVG6200, MBA300, SmartView
  • Max. contact force: 3.5kN, 10kN, 20 kN, 40 kN, 60 kN, 100 kN
  • Max. temperature: 550°C (650°C optional)
  • Vacuum: 0,1 mbar (standard), 1 E-5 (optional), vacuum controller and process gas lines optional
  • Power supply for anodic bonding: 0-2.000V / 50mA
  • Loading chamber: manual
  • Process (recipe) compatible with GEMINI
  • Max. number of bond chambers: 2
  • Customer / application: R&D, pilot-line + manufacturing