EVG®810LT LowTemp™ Plasma Activation System

For SOI, MEMS, compound semiconductors and advanced substrate bonding.

 

  • Wafer / substrate sizes: 50mm - 200mm, 100 - 300mm
  • LowTemp™ plasma activation chamber:
    - Chucks for different wafer sizes: Option (conversion takes less than 30 min)
    - Metal ion free activation: Option
      Process gases: 2 standard process gases: N2 and O2 and 2 additional process gases (option)
    - Universal mass flow controller: Self calibrating, up to 20.000sccm
    - Vacuum system: 9x10-2mbar (standard) and 9x10-3mbar (option with turbo pump)
    - Opening/closing of chamber: automated
    - Loading/unloading of chamber: manual (wafer/substrate placed on loading pins)
  • Optional features:
    - Class 1 mini-environment
    - Metal ion free activation
    - High vacuum system with turbo pump
  • Materials systems qualified with LowTemp™ Plasma Activated Bonding (selected examples only):
    - Si: Si/Si, Si/Si (thermally oxidized), Si  (thermally oxidized)/Si (thermally oxidized)
    - TEOS/TEOS (thermally oxidized)
    - Si/Ge for Germanium-on-Insulator (GeOI)
    - Si/Si Nitride
    - Glass (borofloat, non-alkali): Si/Glass, Glass/Glass
    - Compound semiconductors: GaAs, GaP, InP
    - Polymers: PMMA, Cyclo Olefifn Polymers (e.g. Zeonex, Topas)
    - "Best Known Method" recipes available for users for the above and for other materials (full list available on request).