An accurate wafer bonding process is the key factor in obtaining high quality
single crystalline silicon films on insulating substrates. The EVG850
SOI/Direct Wafer Bonding systems are designed to fulfill a wide range
of fusion/molecular wafer bonding applications, with main focus on SOI
substrates manufacturing. Ultra clean handling of wafers throughout the bonding
process assures high-yield and void-free bonds. All essential steps, from
cleaning and alignment to pre-bonding and IR-inspection are combined in one
high volume production system. EVG850 is the only production bonding system
built to operate in high throughput, high-yield environments and guarantees
void-free SOI wafers up to 300 mm.
The EVG300 series single wafer cleaning systems are designed
for efficient removal of particles. In semiconductor processing, efficient
cleaning and particles removal prior to critical process steps enables maximum
yield. Wafer Bonding is a process which is strongly affected by particles: each
particle on the wafer surface produces a void orders of
magnitude larger than its diameter, contributing to a dramatic yield
EV Group’s LowTemp (LT) Plasma Activated Bonding is available
for both R&D and high volume manufacturing.
The EVG LowTemp plasma activation chamber was developed for modular operation.
It can be configured as single chamber, stand alone, semi-automated unit
(EVG810LT) or integrated in an automated configuration for high volume
production (EVG850LT and GEMINI). The EVG810LT stand alone LowTemp plasma
activation system is suitable for applications such as silicon direct bonding
for manufacturing: SOI (Silicon-on-Insulator), strained silicon, GeOI
(Germanium-on-Insulator), compound semiconductor applications and MEMS devices.