EVG®810LT LowTemp™ Plasma Activation System

For SOI, MEMS, compound semiconductors and advanced substrate bonding.

 

The EVG810LT LowTemp™ Plasma Activation System is a single chamber, stand-alone unit with manual operation. The process chamber allows for ex situ processes (wafers are activated one by one and bonded outside the plasma activation chamber).

Features

  • Surface plasma activation for low temperature bonding (fusion/molecular and intermediate layer bonding)
  • Fastest kinetics of any wafer bonding mechanism
  • No wet processes required
  • Highest bond strength at low temperature annealing (up to 400°C)
  • Applicable for SOI, MEMC, compound semiconductors, and advanced substrates bonding
  • High degree of materials compatibility (including CMOS)