For SOI, MEMS, compound semiconductors and advanced substrate bonding.
The EVG810LT LowTemp plasma activation system is a single chamber,
stand-alone unit with manual operation. The process chamber allows for ex
situ processes (wafers are activated one by one and bonded outside the
plasma activation chamber).
Features
- Surface plasma activation for low temperature bonding (fusion/molecular
and intermediate layer bonding)
- Fastest kinetics of any wafer bonding mechanism
- No wet processes required
- Highest bond strength at low temperature annealing (up to 400°C)
- Applicable for SOI, MEMC, compound semiconductors, and advanced
substrates bonding
- High degree of materials compatibility (including CMOS)