EVG®6200NT Automated Mask Alignment System

Mask Alignment System designed for optical double-side lithography. Volume production types and manual R&D systems are available.

 

  • Substrate / Wafer parameters:
    Size: 3", 100mm, 150mm, 200mm (up to 200 x 200mm);
    Thickness: 0.1 - 10mm
  • Mask parameters: Size: max. 9"x9"; Thickness: <7mm 
  • General system configuration:
    Desktop system: standard; System rack: option; Vibration isolation: passive 
  • Alignment accuracy:
    Top side alignment: ± 0.5µm 3 σ ( 0.1 with insitu alignment verification)
    Bottom side alignment: Option / ± 1.0µm 3 σ
    IR alignment: Option / substrate depending
    Large gap alignment: Option / ± 1.5µm 3 σ
    Bond alignment: Option
    NanoAlign: Option 
  • Alignment stage:
    Precision micrometers: Manual, motorized (option)
    Wedge compensation: Internal 0.5 - 40N contact force, proximity spacers (option) 
  • Resolution
    Vacuum + Hard Contact 0.8 µm
    Hard Contact 1.5 µm
    Soft Contact 2.0 µm
    Proximity 3.0 µm
  • Exposure:
    Wave length: 200 - 240nm / 240 - 280nm / 280 - 350nm / 350 - 450nm, filters (option)
    Mercury arc lamp: 500 / 1000W
    Nanoimprint lithography: Optional tools available for UV-Nanoimprint Lithography and micro contact printing to achieve sub 100nm features 
  • Automatic alignment: Option 
  • Handling system: 3 cassette stations, 5 stations (option), field upgradeable 
  • SECS/GEM II: Option 
  • Lithography Track System Hercules: up to 200 mm