EVG®540 Automated Wafer Bonding System

Configurable for all wafer bonding processes such as anodic, thermo compression, fusion bonding, or LowTemp plasma bonding.

 

  • Heater size = Max. wafer diameter: 150 mm, 200mm, 300mm
  • Min. wafer diameter: 150mm heater: 50mm; 200mm heater: 100mm, 300mm heater: 200mm
  • Bond chuck system / Alignment system:
    150mm heater: EVG610, EVG620, EVG6200
    200mm heater: EVG6200, MBA300, SmartView
    300mm heater: MBA300, SmartView
  • Max. contact force: 3.5kN, 10kN, 20 kN, 40 kN, 60 kN, 100 kN
  • Max. temperature: 550°C (650°C optional)
  • Vacuum:  0,1 mbar (standard), 1 E-5 (optional), vacuum controller and process gas lines optional
  • Power supply for anodic bonding: 0-2.000V / 50mA
  • Loading chamber: 3-axis robot
  • Process (recipe) compatible with GEMINI
  • Max. number of bond chambers:  1
  • Customer / application: pilot-line +manufacturing, high volume manufacturing