EVG®520IS Semi-automated Wafer Bonding System

Configurable for all wafer bonding processes such as anodic, thermo compression, fusion bonding, or LowTemp™ plasma bonding.

 

Brochures
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EVG500 Series Short Brochure.pdf



Technical Papers
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Vertical Integration through Aligned Permanent Bonding Techniques
Abstract: Through-silicon-via (TSV) interconnects can provide the shortest length and the highest density with significantly reduced signal delay and power consumption. Due mainly to a thermal budget of CMOS devices, bonding processes compatible with CMOS processing are limited only to solder-based bonding, plasma-assisted oxide bonding, direct Cu-Cu bonding, polymer adhesive bonding, and metal-polymer hybrid bonding.



Effects of Bonding Process Parameters on the Interfacial Properties of Cu-Cu Direct Bonds for TSV Integration
Abstract: Cu-Cu direct bonding facilitates fine-pitch interconnection with low electrical resistivity and high EM resistance. However, reliable Cu-Cu bonding stems only from high temperature, high pressure and long process time mainly because of its tendency to generate a native oxide which deadly impacts device reliability.
 

Adhesive wafer bonding with photosensitive polymers for MEMS fabrication
Abstract: Adhesive wafer bonding is a technique that uses an intermediate layer (typically a polymer) for bonding two substrates. The main advantages of using this approach are: low temperature processing (maximum temperatures lower than 400°C), surface planarization and tolerance to particles contamination (the intermediate layer can incorporate particles with the diameter in the layer thickness range). The main bonding layers properties required by a large field of applications/designs can be summarized as: isotropic dielectric constants, good thermal stability, low Young’s modulus, and good adhesion to different substrates.
 

Adhesive wafer bonding for wafer-level fabrication of microring resonators
Abstract: Adhesive wafer bonding for wafer-level fabrication of microring resonators Abstract: GaInAsP/InP passive microring resonator devices were successfully fabricated using a vertical integration concept with GaInAsP/InP-on-GaAs wafer bonding. BCB adhesive bonding has been identified as the preferred wafer bonding process. This paper reports results on the development of the wafer bonding and on the microring fabrication.



Adhesive wafer bonding for MEMS applications
Abstract: Low temperature wafer bonding is a powerful technique for MEMS/MOEMS devices fabrication and packaging. Among the low temperature processes adhesive bonding focuses a high technological interest. Adhesive wafer bonding is a bonding approach using an intermediate layer for bonding (e.g. glass, polymers, resists, polyimides). The main advantages of this method are: surface planarization, encapsulation of structures on the wafer surface, particle compensation and decrease of annealing temperature after bonding...



Adhesive wafer bonding with SU-8 intermediate layers for micro-fluidic applications
Abstract: Recently adhesive wafer bonding using SU-8 has gained a lot of interest for micro-fluidic devices e.g. lab-on-chip applications. Due to its specific properties as well as the capability to pattern thin and thick layers accurately, SU-8 is an ideal candidate for micro-fluidic components like channels, reservoirs and valves, but also for micro-optical components...



Advanced anodic bonding processes for MEMS applications
Abstract: Anodic bonding is a powerful technique used in MEMS manufacturing. This process is applied mainly for building three-dimensional structures for microfluidic applications or for wafer level packaging. Process conditions will be evaluated in present paper. An experimental solution for bonding three wafers in one single process step (“triple-stack bonding”) will be introduced...



Aligned fusion wafer bonding for wafer-level packaging and 3D integration
Abstract: Wafer-level packaging via wafer bonding allows smaller and thinner packages, improves the yield due to higher cleanliness, enables the encapsulation of vacuum or process gas and finally reduces the packaging costs significantly. High precision alignment of device wafer to cap wafer allows real chip size packaging as the required width of the sealing rings is in the low micron range...



Cyclo-Olefin polymer direct bonding using low temperature plasma activation bonding
Abstract: Low temperature direct bonding method of Cyclo-Olefin Polymer (COP) plates (20mm x 40mm x 2.0mm) has been developed employing surface plasma treatment with various gases such as N2, O2, and 10%-H2/Ar. Surface energy of the bonded interface has been measured by razor blade method...



Effects of bonding process parameters on wafer-to-wafer alignment accuracy in benzocyclobutene (BCB) dielectric wafer bonding
Abstract: Wafer-level three-dimensional (3D) integration is an emerging technology to increase the performance and functionality of integrated circuits (ICs). Aligned wafer-to-wafer bonding with dielectric polymer layers (e.g., benzocyclobutene (BCB)) is a promising approach for manufacturing of 3D ICs, with minimum bonding impact on the wafer-to-wafer alignment accuracy essential...



High-performance temporary adhesives for wafer bonding applications
Abstract: This paper reviews a high temperature–resistant spin-on adhesive platform and the equipment solution used to apply the adhesive to a wafer, temporarily bond the wafer to a carrier, and debond the thinned wafer in an automated high-throughput method. The focus of this paper is on the physical and chemical properties of the spin-on adhesive material that enable an automated process...



Low temperature MEMS manufacturing processes: plasma activated wafer bonding
Abstract: This paper introduces a new technology: low temperature plasma activated wafer bonding. In this process, the wafers are submitted to a plasma treatment prior to bringing them into contact for bonding. The surface activation allows process temperature ranging from room temperature to maximum 400°C...



Microring resonators fabrication by BCB adhesive wafer bonding
Abstract: Microring resonator devices are attractive for Wavelength Division Multiplexing (WDM) applications because of their inherent spectral characteristics. GaInAsP/InP microring resonator devices were fabricated using a vertical integration concept based on GaInAsP/InP-on-GaAs wafer-to-wafer bonding...



New Challenges for 300 mm Si Technology - 3D Interconnects at Wafer Scale by Aligned Wafer Bonding
Abstract: A new alignment technique is proposed for wafer level 3D interconnects fabrication: the SmartView®. This original procedure is using alignment keys located in the bonding interface and enables an alignment precision of 1 µm...



Plasma activated wafer bonding: the new low temperature tool for MEMS fabrication
Abstract: Manufacturing and integration of MEMS devices by wafer bonding often lead to problems generated by thermal properties of materials. These include alignment shifts, substrate warping and thin film stress. By limiting the thermal processing temperatures, thermal expansion differences between materials can be minimized in order to achieve stressfree, aligned substrates without warpage...



Tried and tested bonding for MEMS
Abstract: As markets for MEMS devices grow, there is a parallel need for productive manufacturing techniques to ensure MEMS manufacturing can develop any good potential. Despite being an emerging technology many manufacturing methods have already been tried and tested in other fields...



Triple-stack anodic bonding for MEMS applications
Abstract: Wafer bonding techniques are key technologies for MEMS devices fabrication. Anodic bonding is a very mature technique used for wafers stacking or wafer level packaging. This paper reports results on a process allowing Glass - Si - Glass and Si - Glass - Si triple-stacks bonding in a single process step...



Wafer-scale BCB resist-processing technologies for high density integration and electronic packaging
Abstract: IC performance is drastically limited by line-to-line capacity coupling and RC interconnect delay times resulted from the continuous increase in integration densities with 0.10µm line and space width approaches, as well from increased signal frequencies. The new achievements in terms of circuit lines shrinkage emphasize the need for the introduction of Cu and low-k dielectric materials...