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EVG850 SOI Short Brochure.pdf
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Advanced low temperature bonding technologies
Abstract: The different fields and especially ist various applications for micro electro mechanical systems (MEMS) prevent the use of uniform packaging techniques for all types of µ-device. Several bonding techniques performed at wafer-scale, with the advantage of protecting the device against particles, contaminations or even damage during the sawing and dicing process are used right now...
Low temperature MEMS manufacturing processes: plasma activated wafer bonding
Abstract: This paper introduces a new technology: low temperature plasma activated wafer bonding. In this process, the wafers are submitted to a plasma treatment prior to bringing them into contact for bonding. The surface activation allows process temperature ranging from room temperature to maximum 400°C...
Plasma Activated Wafer Bonding of Silicon: In Situ and Ex Situ Processes
Abstract: Plasma activated wafer bonding generated a high interest in last decade due to the important process temperature reduction. With the main advantage of bringing some applications at industrial degree of feasibility....
Wafer Bonding for 300 mm SOI Substrates Fabrication
Abstract: Silicon-on-insulator (SOI) describes a sandwich-like structure in which a monocrystalline silicon layer (named device layer) is electrically isolated from the substrate by an oxide layer. Different fabrication methods are competing today. A short review of the main specific challenges raised nowadays by the specific process requirements will be reviewed in this paper. An example of integrated automated SOI high production equipment through direct wafer bonding will be presented.