EVG®810LT LowTemp™ Plasma Activation System

For SOI, MEMS, compound semiconductors and advanced substrate bonding.

 

Brochures
Please click the picture to download the brochure in PDF format


EVG810LT Series Short Brochure.pdf

Technical Papers
Please click the titles to download the full papers in PDF format


Aligned fusion wafer bonding for wafer-level packaging and 3D integration
Abstract: Wafer-level packaging via wafer bonding allows smaller and thinner packages, improves the yield due to higher cleanliness, enables the encapsulation of vacuum or process gas and finally reduces the packaging costs significantly. High precision alignment of device wafer to cap wafer allows real chip size packaging as the required width of the sealing rings is in the low micron range...



Aligned low temperature wafer bonding for MEMS manufacturing: challenges and promises

Abstract: The increased complexity of current generations of MEMS devices imposes new requirements for wafer bonding. Among these can be mentioned low process temperature (<400°C), precise optical alignment of substrates, ability to bond a large variety of substrates and the possibility to bond with defined intermediate layers...



Advanced low temperature bonding technologies
Abstract: The different fields and especially ist various applications for micro electro mechanical systems (MEMS) prevent the use of uniform packaging techniques for all types  of µ-device. Several bonding techniques performed at wafer-scale, with the advantage of protecting the device against particles, contaminations or even damage during the sawing and dicing process are used right now...



Low temperature MEMS manufacturing processes: plasma activated wafer bonding
Abstract: This paper introduces a new technology: low temperature plasma activated wafer bonding. In this process, the wafers are submitted to a plasma treatment prior to bringing them into contact for bonding. The surface activation allows process temperature ranging from room temperature to maximum 400°C...



Plasma activation for low temperature wafer bonding
Abstract: Wafer bonding behavior of plasma activated Si and SiO2 surfaces was investigated. Process evaluation was performed by various experiments. Surface energy of wafer pairs bonded after different storage times at room temperature and after thermal annealing at 300°C was investigated as a measure of surface activation lifetime...



Plasma Activated Wafer Bonding of Silicon: In Situ and Ex Situ Processes
Abstract: Plasma activated wafer bonding generated a high interest in last decade due to the important process temperature reduction. With the main advantage of bringing some applications at industrial degree of feasibility....



Plasma activated wafer bonding for MEMS
Abstract:   Wafer bonding became a key technology in various MEMS devices manufacturing. In this respect, wafer bonding is a very important technology as far as it enables not only 3D structure building but also wafer level packaging ...



Plasma activated wafer bonding: the new low temperature tool for MEMS fabrication
Abstract: Manufacturing and integration of MEMS devices by wafer bonding often lead to problems generated by thermal properties of materials. These include alignment shifts, substrate warping and thin film stress. By limiting the thermal processing temperatures, thermal expansion differences between materials can be minimized in order to achieve stressfree, aligned substrates without warpage...



Temperature reduced direct bonding by plasma assisted wafer surface pre-treatment
Abstract: As standard wafer bonding processes require typically a high temperature annealing step, this limits the use of wafer bonding. Due to the need to expand the applications field, low temperature (<400°C) wafer bonding processes were developed. One promising technology is plasma activated wafer bonding...



Tried and tested bonding for MEMS
Abstract: As markets for MEMS devices grow, there is a parallel need for productive manufacturing techniques to ensure MEMS manufacturing can develop any good potential. Despite being an emerging technology many manufacturing methods have already been tried and tested in other fields...



Wafer Bonding of Plasma Activated Surfaces
Abstract:
Wafer bonding behavior of plasma activated Si and SiO2 surfaces was investigated. Process evaluation was performed by various experiments. Surface energy of wafer pairs bonded after different storage times at room temperature and after thermal annealing at 300°C was investigated as a measure of surface activation lifetime...



Wafer-level plasma activated bonding: new technology for MEMS fabrication
Abstract: Manufacturing and integration of MEMS devices by wafer bonding often lead to problems generated by thermal properties of materials. These include alignment shifts, substrate warping and thin film stress. By limiting the thermal processing temperatures, thermal expansion differences between materials can be minimized in order to achieve stress-free, aligned substrates without warpage...