Technical PapersPlease click
the titles to download the full papers in PDF format
Plasma Activated Wafer
Bonding of Silicon: In Situ and Ex Situ
ProcessesAbstract: Plasma activated
wafer bonding generated a high interest in last decade due to the
important process temperature reduction. With the main advantage of
bringing some applications at industrial degree of feasibility....
of Plasma Activated Surfaces
Wafer bonding behavior of plasma activated Si and
SiO2 surfaces was investigated. Process evaluation was performed by various
experiments. Surface energy of wafer pairs bonded after different storage
times at room temperature and after thermal annealing at 300°C was
investigated as a measure of surface activation
Wafer Bonding for 300
mm SOI Substrates Fabrication
Silicon-on-insulator (SOI) describes a sandwich-like structure in which a
monocrystalline silicon layer (named device layer) is electrically isolated
from the substrate by an oxide layer. Different fabrication methods are
competing today. A short review of the main specific challenges raised
nowadays by the specific process requirements will be reviewed in this
paper. An example of integrated automated SOI high production equipment
through direct wafer bonding will be presented.
EV Group Scores Fourth Consecutive Triple Crown Win in Annual VLSIresearch Customer Satisfaction Survey
EV Group Receives Multiple Orders for GEMINI® FB XT Fusion Bonder for 3D Chip Stacking Production Applications
more news ..
SEMICON West 2016
more events ..
Logic / Memory
EV Group Unveils Industry's First Wafer Bonding System for 450mm SOI Semiconductor Wafers
EV Group Corporate Video