EVG®610 Semi-automated Mask Alignment System

Mask aligner designed for optical double-side lithography. Dedicated for R&D and small-volume applications.

 

  • Wafer diameter (Substrate size / mm):
    Up to 100 / 150 / 200 mm round, 150 mm x 150 mm
    up to 10 mm thickness
  • Max. mask size: Up to 5" / 7" / 9"
  • Alignment modes:
    Top side CCD: Up to  ± 0.5 µ m / 3 σ
    Top side with eye pieces: Option
    Bottom side: Option
    Transmissive IR: Option
    Bond alignment: Option
    NIL and Micro contact printing: Option
    Insitu alignment verification: Option
  • Stage:
    Precision micrometers: Manual
    Contact force: Adjustable 5N - 80N
  • Resolution 
    Vacuum + Hard Contact  0.8 µm
    Hard Contact  1.5 µm
    Soft Contact  2.0 µm
    Proximity   3.0 µm
    Wave length: 350-450 nm (NUV, default); optional: down to 200 nm (DUV)
    Mercury arc lamp: 350 W, 500 W
  • Nanoimprint Lithography (NIL)
    Hard Stamp: 1" x 1" active imprint are, 50 nm pattern resolution and alignmen down to  ± 0.1 µ m / 3 σ
    Soft stamp: Up to 150 mm active imprint area, 50 nm pattern resolution
  • Typical customer application: R&D / Pilot line production