EVG®610 Semi-automated Mask Alignment System

Mask aligner designed for optical double-side lithography. Dedicated for R&D and small-volume applications.

 

  • Wafer diameter (Substrate size / mm):
    Pieces up to 200 mm, 150 mm x 150 mm
  • Max. mask size: Up to 9" x 9"
  • Alignment modes:
    Top side CCD: Up to  ± 0.5 µ m / 3 σ
    Top side with eye pieces: Option
    Bottom side: Option
    Transmissive IR: Option
    Reflective IR: Option
    Bond alignment: Option
    NIL and Micro contact printing: Option
    Insitu alignment verification: Option
  • Stage:
    Precision micrometers: Manual
    Contact force Adjustable: 5N - 80N
  • Exposure
    Modes: Proximity, soft-, hard- and vacuum contact
    Resolution: <0.8 µ m in vacuum contact, 2 µ m in proximity
    Wave length: 200 - 240 nm / 240 - 280 nm / 280 - 350 nm / 350 - 450 nm, filters (optional)
    Mercury arc lamp: 350 / 500W NUV; 500W DUV
  • Nanoimprint Lithography (NIL)
    Hard Stamp: 1" x 1" active imprint are, 50 nm pattern resolution and alignmen down to  ± 0.1 µ m / 3 σ
    Soft stamp: Up to 150 mm active imprint area, 50 nm pattern resolution
  • Typical customer application: R&D / Pilot line production