EVG®560HBL Fully Automated Wafer Bonding System for HB-LED

Configurable for all wafer bonding processes such as eutectic, thermo compression, fusion bonding, or LowTemp plasma bonding.

 

  • Max. wafer diameter: 50 - 200mm
  • Substrate materials:   Sapphire, SiC, Si, AlN, metal, ceramic
  • Alignment mode: Mechanical alignment
  • Bonding processes: Metal, adhesive, fusion bonding
  • Throughput: up to 160 bonds/hour (2" wafer equivalents)
  • Max. contact force: 100 kN
  • Max. temperature: 550°C
  • Vacuum: 0,1 mbar (standard), 0,00001 mbar (optional)
  • Max. number of bond chambers: 4
  • Max. number of pre-processing modules:  3
  • Mini-environment:   Optional
  • Wafer ID reader: Optional
  • Bondchuck ID reader: Optional
  • SECS II/GEM interface: Optional
  • Typical customer application: High volume manufacturing