EVG®510

Wafer Bonding System

Wafer bonding system for R&D or low-volume production - fully compatible with high-volume-manufacturing equipment

The EVG510 is a highly flexible wafer bonding system that can handle substrate sizes from pieces to 200 mm. This tool supports all common wafer bonding processes such as anodic, glass frit, solder, eutectic, transient liquid phase, and direct. The easy access bond chamber and tooling design allows for quick and easy retooling for different wafer sizes and processes with a conversion time of less than 5 minutes. This versatility is ideal for universities, R&D facilities, or low-volume production applications. The design of the bond chambers is the same on the EVG high-volume-manufacturing tools, such as the EVG GEMINI, and the bonding recipes are easily transferable, allowing for easy scale up of production volumes.

Features

  • Unique pressure and temperature uniformity
  • Compatible with EVG mechanical and optical aligners
  • Flexible design and configurations for research and piloting
    • Form single chips to wafers
    • Various processes (eutectic, solder, TLP, direct bonding)
    • Optional turbopump (<1E-5 mbar)
    • Upgradeable for anodic bonding
    • Open chamber design for easy conversion and maintenance
  • Production compatible
    • High throughput with fast heating and pumping specifications
    • High yield through automatic wedge compensation
    • Open chamber design for fast conversion and maintenance
    • Smallest footprint for a 200 mm bonding system: 0.8 m2
    • Recipes are fully compatible with EVG’s high-volume-manufacturing bonding systems
EVG510

Technical Data

Max contact force
10, 20, 60 kN
Heater size 150 mm 200 mm
Minimum substrate dimension single chips 100 mm
Vacuum
Standard: 0.1 mbar
Optional: 1E-5 mbar
Max. temperature
550 °C
Single chips processing
Yes
Bond chuck system / Alignment system
150 mm heater: EVG®610, EVG®620, EVG®6200
200 mm heater: EVG®6200, SmartView® NT
Active water cooling
For bottom side
Power supply for anodic bonding
Max. voltage: 2 kV
Max. current: 50 mA
Loading chamber
Manual

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