EVG®301 Semi-automated Single Wafer Cleaning System

Designed for efficient removal of particles.

 

Brochures
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EVG300 Series Short Brochure.pdf

Technical Papers
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Integration of a Temporary Carrier in a TSV Process Flow
Abstract: Three-dimensional (3-D) wafer stacking technologies offer new possibilities in terms of device architecture and miniaturization [1-3]. To stack wafers, reliable throughsilicon vias (TSVs) and interconnections must be processed into ultrathin wafers, and such processing is made possible by new methods for wafer handling...
 

Adhesive wafer bonding for wafer-level fabrication of microring resonators
Abstract: Adhesive wafer bonding for wafer-level fabrication of microring resonators Abstract: GaInAsP/InP passive microring resonator devices were successfully fabricated using a vertical integration concept with GaInAsP/InP-on-GaAs wafer bonding. BCB adhesive bonding has been identified as the preferred wafer bonding process. This paper reports results on the development of the wafer bonding and on the microring fabrication.



Advanced low temperature bonding technologies
Abstract: The different fields and especially ist various applications for micro electro mechanical systems (MEMS) prevent the use of uniform packaging techniques for all types  of µ-device. Several bonding techniques performed at wafer-scale, with the advantage of protecting the device against particles, contaminations or even damage during the sawing and dicing process are used right now...



Low temperature MEMS manufacturing processes: plasma activated wafer bonding
Abstract: This paper introduces a new technology: low temperature plasma activated wafer bonding. In this process, the wafers are submitted to a plasma treatment prior to bringing them into contact for bonding. The surface activation allows process temperature ranging from room temperature to maximum 400°C...



III-V wafer bonding technology for wafer-level fabrication of GaInAsP/InP microring resonators
Abstract: GaInAsP/InP passive microring resonator devices were successfully fabricated using a vertical integration conecpt with GaInAsP/InP-on-GaAs wafer bonding. BCB adhesive bonding has been identified as the preferred wafer bonding process. This paper reports results on the development of the wafer bonding and on the microring fabrication.



Plasma activated wafer bonding: the new low temperature tool for MEMS fabrication
Abstract: Manufacturing and integration of MEMS devices by wafer bonding often lead to problems generated by thermal properties of materials. These include alignment shifts, substrate warping and thin film stress. By limiting the thermal processing temperatures, thermal expansion differences between materials can be minimized in order to achieve stressfree, aligned substrates without warpage...