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Plasma Activated Wafer
Bonding of Silicon: In Situ and Ex Situ
ProcessesAbstract: Plasma activated
wafer bonding generated a high interest in last decade due to the
important process temperature reduction. With the main advantage of
bringing some applications at industrial degree of feasibility....
of Plasma Activated Surfaces
Wafer bonding behavior of plasma activated Si and
SiO2 surfaces was investigated. Process evaluation was performed by various
experiments. Surface energy of wafer pairs bonded after different storage
times at room temperature and after thermal annealing at 300°C was
investigated as a measure of surface activation
Wafer Bonding for 300
mm SOI Substrates Fabrication
Silicon-on-insulator (SOI) describes a sandwich-like structure in which a
monocrystalline silicon layer (named device layer) is electrically isolated
from the substrate by an oxide layer. Different fabrication methods are
competing today. A short review of the main specific challenges raised
nowadays by the specific process requirements will be reviewed in this
paper. An example of integrated automated SOI high production equipment
through direct wafer bonding will be presented.
Imec und EVG demonstrieren erstmals eine Pitch-Overlay-Genauigkeit von 1.8 µm beim Waferbonden
EVG und NNFC präsentieren Ergebnisse der gemeinsamen Entwicklung neuartiger, nanostrukturierter Antireflexbeschichtungen für Displays
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