Verbindungshalbleiter und Leistungsbauteile aus Silizium

Ausgangsbasis sind Wafer aus kombinierten Halbleitermaterialien, so genannten Compound Semiconductors.

 

table-sio2-wafer-combinations

 

gaAs-on-InP

Many compound semiconductor materials can be bonded by low temperature plasma activated wafer bonding and can be found in production today. Transmission electron microscopy reveals that a GaAs/InP oxide-free, covalent bonded interface has a thickness of less than 2 nm, and that the quality of the underlying crystal is not affected by the bonding process.

 

C2W

 

Wafer-level die transfer process SEM Image showing an array of micromirrors. Micromirrors are combinations of microelectronic and optical components. Courtesy of Seoul National University.

 

 

High-power LEDs redesigned to replace fluorescent and neon light sources and are used in surgical, traffic and automotive applications. Courtesy of LumiLeds Lighting.Cross-section of temporary bond utilizing Brewer Science® 's HT series
adhesive. Source: EVG.

 

 

Sub-µm high-aspect ratio structures created with DUV-Lithography.
Courtesy of CEETAM.
Scanning Acoustic Microscope (SAM) image of an InP/GaAs wafer pair bonded using a Au:Sn eutectic wafer bonding process. Source: EVG.

 

 
Cross-section SEM image of an InP/GaAs wafer pair bonded using a Au:Sn eutectic wafer bonding process. Source: EVG.