Verbindungshalbleiter und Leistungsbauteile aus Silizium

High-power LEDs redesigned to replace fluorescent and neon light sources and are used in surgical, traffic and automotive applications. Courtesy of LumiLeds Lighting.


Sub-µm high-aspect ratio structures
created with DUV-Lithography.
Courtesy of CEETAM.

Cross-section SEM image of an InP/GaAs wafer pair bonded using a Au:Sn eutectic wafer bonding process. Source: EVG.

SEM Image showing an array of micromirrors. Micromirrors are combinations of microelectronic and optical components. Courtesy of Seoul National University.

Cross-section of temporary bond utilizing Brewer Science^® 's HT series
adhesive. Source: EVG.

Scanning Acoustic Microscope (SAM) image of an InP/GaAs wafer pair bonded using a Au:Sn eutectic wafer bonding process. Source: EVG.